Theory of hydrogen diffusion and reactions in crystalline silicon
نویسندگان
چکیده
منابع مشابه
Theory of Hydrogen Reactions in Silicon
We report first-principles total-energy calculations for H atoms in a Si lattice. Our results for single H atoms are presented in the form of total-energy surfaces, providing immediate insight in stable positions and migration paths. We examine the stability of different charge states (H+, HO, H-) as a function of Fermi-level position, and its implications for H diffusion in p-type vs. n-type m...
متن کاملthe analysis of the role of the speech acts theory in translating and dubbing hollywood films
از محوری ترین اثراتی که یک فیلم سینمایی ایجاد می کند دیالوگ هایی است که هنرپیش گان فیلم میگویند. به زعم یک فیلم ساز, یک شیوه متأثر نمودن مخاطب از اثر منظوره نیروی گفتارهای گوینده, مثل نیروی عاطفی, ترس آور, غم انگیز, هیجان انگیز و غیره, است. این مطالعه به بررسی این مسأله مبادرت کرده است که آیا نیروی فراگفتاری هنرپیش گان به مثابه ی اعمال گفتاری در پنج فیلم هالیوودی در نسخه های دوبله شده باز تولید...
15 صفحه اولEffect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics
Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are ...
متن کاملVibrational lifetime of bond-center hydrogen in crystalline silicon
The lifetime of the stretch mode of bond-center hydrogen in crystalline silicon is measured to be T1 = 7.8+/-0.2 ps with time-resolved, transient bleaching spectroscopy. The low-temperature spectral width of the absorption line due to the stretch mode converges towards its natural width for decreasing hydrogen concentration C(H), and nearly coincides with the natural width for C(H) approximatel...
متن کاملComputing Diffusion Coefficients of Intrinsic Point Defects in Crystalline Silicon
The quality of crystalline silicon highly influences the quality of semiconductor devices fabricated with it. Grown-in defects, such as octahedral voids or networks of large dislocation loops can be detrimental to the functionality of devices. Both type of defects result from the interaction of intrinsic point defects, vacancies and self-interstitials during growth and subsequent annealing of t...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 1989
ISSN: 0163-1829
DOI: 10.1103/physrevb.39.10791